- 您现在的位置：买卖IC网 > Sheet目录511 > SI5504DC-T1-GE3 (Vishay Siliconix)MOSFET N/P-CH 30V CHIPFET 1206-8
Si5504DC
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
N-Ch
P-Ch
N-Ch
P-Ch
1.0
- 1.0
± 100
± 100
V
nA
V DS = 24 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 85 °C
P-Ch
N-Ch
-1
5
μA
V DS = - 24 V, V GS = 0 V, T J = 85 °C
P-Ch
-5
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V DS ≤ - 5 V, V GS = - 10 V
V GS = 10 V, I D = 2.9 A
N-Ch
P-Ch
N-Ch
10
- 10
0.072
0.085
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 10 V, I D = - 2.1 A
V GS = 4.5 V, I D = 2.2 A
P-Ch
N-Ch
0.137
0.120
0.165
0.143
Ω
V GS = - 4.5 V, I D = - 1.6 A
P-Ch
0.240
0.290
Forward Transconductance a
g fs
V DS = 15 V, I D = 2.9 A
V DS = - 15 V, I D = - 2.1 A
N-Ch
P-Ch
6
3
S
Diode Forward Voltage a
V SD
I S = 0.9 A, V GS = 0 V
I S = - 0.9 A, V GS = 0 V
N-Ch
P-Ch
0.8
- 0.8
1.2
- 1.2
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
t rr
N-Channel
V DS = 15 V, V GS = 10 V, I D = 2.9 A
P-Channel
V DS = - 15 V, V GS = - 10 V, I D = - 2.1 A
N-Channel
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
P-Channel
V DD = - 15 V, R L = 15 Ω
I D ? - 1 A, V GEN = - 10 V, R g = 6 Ω
I F = 0.9 A, dI/dt = 100 A/μs
I F = - 0.9 A, dI/dt = 100 A/μs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
5.5
0.8
1.2
1.0
0.9
7
8
12
11
12
14
7
8
40
40
7.5
6.6
11
12
18
18
18
21
11
12
80
80
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI5511DC-T1-GE3
MOSFET N/P-CH 30V 1206-8
SI5513CDC-T1-E3
MOSFET N/P-CH 20V CHIPFET 1206-8
SI5519DU-T1-GE3
MOSFET N/P-CH 20V PWRPAK CHPFET
SI5853CDC-T1-E3
MOSFET P-CH 20V 4A 1206-8
SI5853DDC-T1-E3
MOSFET P-CH D-S 20V 1206-8
SI5855CDC-T1-E3
MOSFET P-CH/SCHOTTKY 20V 1206-8
SI5857DU-T1-GE3
MOSFET P-CH D-S 20V PPAK CHIPFET
SI5858DU-T1-GE3
MOSFET N-CH 20V 6A PPAK CHIPFET
相关代理商/技术参数
SI5509DC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET
SI5509DC_08
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET
SI5509DC-T1-E3
功能描述:MOSFET N-AND P-CH 20V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5509DC-T1-GE3
功能描述:MOSFET N/P-CH 20V CHIPFET 1206-8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SI5511DC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET
SI5511DC-T1-E3
功能描述:MOSFET 30V 4.0/3.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5511DC-T1-GE3
功能描述:MOSFET N/P-CH 30V 1206-8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SI5513CDC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET